Semiconductor device having high voltage protection capability

摘要

A semiconductor device is presented having an improved high voltage protection scheme that comprises an integrated Schottky diode (28) in conjunction with a plurality of back to back diodes (29) to limit a voltage potential that may arise between the gate (26) and drain terminals (27) of a semiconductor device. A second embodiment comprises a contact region (43) connected to a plurality of back to back diodes (46) configured so that some of the voltage is supported by the back to back diodes (46) and the remainder is supported by the substrate (39). These structures will support any excess voltage in the conduction mode, rather than the avalanche mode and may employ the use of a depletion region (51) to support a blocking voltage.