| 摘要 |
PURPOSE: To obtain a semiconductor light-emitting diode with improved efficiency and brightness by a method wherein a current distribution from a surface electrode up to a light-emitting region is improved. CONSTITUTION: In a light-emitting diode which is formed on a semiconductor substrate 1, a high-resistance layer 5 is formed on a light-emitting region layer, a low-resistance layer 6 is then formed on it in such a way that a part of the surface is exposed, and an electrode 8 on the light-emitting surface side is formed over the surface of both resistance layers. |
