| 摘要 |
PURPOSE: To form a quantum well thin line (well box) into the shape in which the dispersion is small. CONSTITUTION: An SiO2 film 12 is provided on a GaAs substrate 11 in which (100) plane tilted at 6 deg. in the [011] direction is adopted as a main plane (a) and thereon an opening part 13 running in [01 bar 1] direction is formed to form an SiO2 film stripe 12a (b). GaAs is grown by a vapor phase epitaxy(VPE) method to form a GaAs growth layer 14 having a step-like step difference on the surface (c). A first InGaP layer 17, a GaAs well layer 18 and a second InGaP layer 19 are formed. |
