Method of estimating etching damage

摘要

The invention provides a method of estimating damage which a semiconductor substrate has suffered in a dry etching step included in a semiconductor fabricating step. The invention includes the steps of forming a delta-doped donor layer at a predetermined depth measuring from a surface of the semiconductor, measuring electron concentrations of the semiconductor before and after the dry etching step, and calculating a difference between the delta-doped donor concentrations to thereby quantitatively estimate a distribution of the damage throughout the depth of the semiconductor.