| 摘要 |
PURPOSE: To prevent the failure of a crucible, to prolong the time for operation and to stabilize pulling-down conditions and fine wire-shaped silicon production by using the crucible which consists of glassy carbon and is penetrated with a fine hole in its bottom, thereby suppressing the formation of SiC. CONSTITUTION: Raw material silicon is held in the crucible 1 which is formed of the glassy carbon of a high melting point material, is penetrated with the fine hole in its bottom and is of <=1.5μm in the surface roughness of its inside surface and such crucible is installed in a quartz tube 5 in the micro-pulling- down method. The crucible 1 is heated up by a high-frequency coil 4 under gaseous Ar flow 6 to melt the silicon therein and to obtain a silicon melt 2. This silicon melt 2 flows out downward through the fine hole formed perpendicularly at the center in the bottom of the crucible 1 and solidifies by coming into contact with the seed crystal 8. While the silicon solid-liquid boundary at the front end of the fine hole is observed by a CCD camera 7 from outside, a pulling-down shaft 9 is pulled down and the fine wire-shaped silicon having a diameter of <=1mm is produced. |
