| 摘要 |
PROBLEM TO BE SOLVED: To obtain a small-sized inexpensive tunnel chip sensor, and a fabrication method thereof, having integrated structure characterized by a wide bandwidth, a precise chip, controllability of the cantilever, low control voltage, low sensitivity to out-of-axis force, low temperature sensitivity, high impact resistance, etc. SOLUTION: The single wafer tunnel sensor comprises a semiconductor substrate 42, a tunnel electrode 50 on the substrate 42, and a cantilever electrode 44 extending from the substrate 42. The cantilever electrode 44 has one end above the substrate 42 being spaced apart from the tunnel electrode 50. In response to the bias voltage between the cantilever electrode 44 and the tunnel electrode 50, a tunnel current flows between them to produce an output signal which is modulated with a force being fed in order to deflect the cantilever electrode 44 with respect to the tunnel electrode 50. |
