发明名称 |
Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode |
摘要 |
A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho<SUP>3+</SUP>, Sm<SUP>3+</SUP>, Eu<SUP>3+</SUP>, Dy<SUP>3+</SUP>, Er<SUP>3+</SUP>, and Tb<SUP>3+</SUP> so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from <SUP>5</SUP>S<SUB>2 </SUB>to <SUP>5</SUP>I<SUB>7</SUB>, from <SUP>5</SUP>S<SUB>2 </SUB>to <SUP>5</SUP>I<SUB>8</SUB>, from <SUP>4</SUP>G<SUB>5/2 </SUB>to <SUP>6</SUP>H<SUB>5/2</SUB>, from <SUP>4</SUP>G<SUB>5/2 </SUB>to <SUP>6</SUP>H<SUB>7/2</SUB>, from <SUP>4</SUP>F<SUB>3/2 </SUB>to <SUP>6</SUP>H<SUB>11/2</SUB>, from <SUP>5</SUP>D<SUB>0 </SUB>to <SUP>7</SUP>F<SUB>2</SUB>, from <SUP>4</SUP>F<SUB>9/2 </SUB>to <SUP>6</SUP>H<SUB>13/2</SUB>, from <SUP>4</SUP>F<SUB>9/2 </SUB>to <SUP>6</SUP>H<SUB>11/2</SUB>, from <SUP>4</SUP>S<SUB>3/2 </SUB>to <SUP>4</SUP>I<SUB>15/2</SUB>, from <SUP>2</SUP>H<SUB>9/2 </SUB>to <SUP>4</SUP>I<SUB>13/2</SUB>, and from <SUP>5</SUP>D<SUB>4 </SUB>to <SUP>7</SUP>F<SUB>5</SUB>. The above solid-state laser-crystal or optical fiber is excited with a GaN-based compound laser diode.
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