| 摘要 |
PURPOSE: To increase the capacitance of a capacitor without increasing the number of processes. CONSTITUTION: After photoresist 9 which contains particles 10 of carbon, silicon, etc., is applied to a polycrystalline silicon film and patterned, the polycrystalline silicon film is etched with the patterned photoresist 9 as a mask to form the lower electrode 8' of a capacitor. The photoresist 9 is removed by dry-etching using an oxygen plasma. At that time, the etching is performed with CF4 which is contained with the flow rate ratio of 5-50%. With this constitution, not only the photoresist 9 is removed but also the surface of the lower electrode 8' is unevenly etched because of the difference in etching rate between the photoresist 9 material itself and the particles 10 in the photoresist 9, so that fine unevenness can be formed in the surface of the lower electrode 8'. |
