| 摘要 |
PURPOSE: To provide a semiconductor device which is so improved as to obtain a sufficient capacitor capacitance with a more minute region. CONSTITUTION: A storage node 10 is provided on a semiconductor substrate 1. The storage node 10 includes a vertical part 20 which is extended upward from the surface of the semiconductor substrate 1, a horizontal part 21 which is extended in a direction practically in parallel with the semiconductor substrate 1 and has an upper surface 21a and a lower surface 21b and a connection part 22 which is extended from the top end of the vertical part 20 and bent so as to be connected to the upper surface 21a of the horizontal part 21 and connects the vertical part 20 to the horizontal part 21. A capacitor insulating film 11 is so formed on the semiconductor substrate 1 as to cover the outer circumference of the upper surface 21a and the lower surface 21b of the horizontal part 21 and the connection part 22. A cell plate electrode 12 is so provided as to face the storage node 10 with the capacitor insulating film 11 therebetween. |
