发明名称 OPENING-PART BURYING DEVICE AND MANUFACTURE OF SEMICONDUCTORELEMENT USING IT
摘要 <p>PROBLEM TO BE SOLVED: To prevent a void or an aggregation phenomenon by heating a board simultaneously with rotation in the process for filling an opening. e.g. a trench or contact hole, with a substance layer thereby causing the substance layer to flow. SOLUTION: When a motor 105 is operated to turn the rotary shaft 100 thereof, a large number of plates 110, each coupled with the rotary shaft 100 while mounting a wafer 115 on the rotary shaft 100 side, are also rotated. At the same time, a heater 120 is operated to heat the wafer 115. The wafer 115 is subjected to centrifugal force through the rotation and a substance layer is subjected to a force directing downward of the wafer 115. When the wafer 115 is heated, the substance layer is fluidized. During the process, inert gas is injected from a gas injecting section 125 into a chamber 140. With such arrangement, the opening can be filled with no void.</p>
申请公布号 JPH08181047(A) 申请公布日期 1996.07.12
申请号 JP19950207635 申请日期 1995.07.21
申请人 SAMSUNG ELECTRON CO LTD 发明人 BOKU YASUO
分类号 H01L21/31;H01L21/00;H01L21/02;H01L21/28;H01L21/762;H01L21/768;(IPC1-7):H01L21/02 主分类号 H01L21/31
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