| 摘要 |
PURPOSE: To provide a highly efficient epitaxial wafer, which can be used for a light-emitting element and the like, for example, and the method for its industrial manufacture. CONSTITUTION: The title epitaxial wafer is provided with a compound semiconductor substrate 1 which is formed by the material selected from a group consisting of GaAs, GaP, InAs and InP, a GaN buffer layer 2 of 100 to 800Å in thickness formed on the substrate 1, and a GaN-containing epitaxial layer 3 formed on the buffer layer 2. The buffer layer 2 is formed at the first temperature using the organometallic chloride vapor phase epitaxial growth method, and the epitaxial layer 3 is formed at the temperature higher than the first temperature using an organometallic chroride vapor phase epitaxial growth method. |
