发明名称 THIN-FILM TRANSISTOR ARRAY SUBSTRATE
摘要 <p>PURPOSE: To provide a TFT array substrate with which the disconnection by corrosion of low-resistance gate wirings in a patterning stage of pixel electrodes, etc., is prevented while preventing increase of the contact resistance by the heat history of contact of gate electrode wires with transparent holding capacitor electrodes. CONSTITUTION: This TFT array substrate for a matrix type liquid crystal display device has the gate electrode wires 3, source electrode wires 10, TFTs disposed in the intersected parts of the electrode lines, pixel electrodes 5 connected to the drain electrodes 11 of the TFTs and the holding capacitor electrodes 2, which consists of transparent conductive films and is electrically connected to the gate electrode lines and a holding capacitor insulating film 13 on an insulating substrate 1. The gate electrode wires has at least first gate electrode lines 3a consisting of a low-resistance material and second gate electrode lines 3b consisting of a high melting metallic material. The surfaces of the first gate electrode lines are completely coated with the second gate electrode lines. The contact parts of the gate electrode lines and the holding capacitor electrodes are connected by the material of the second gate electrode lines.</p>
申请公布号 JPH08179362(A) 申请公布日期 1996.07.12
申请号 JP19940319826 申请日期 1994.12.22
申请人 MITSUBISHI ELECTRIC CORP;ASAHI GLASS CO LTD 发明人 NAKAGAWA NAOKI;SAKAMOTO HIROKAZU
分类号 G02F1/136;G02F1/1368;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
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