| 摘要 |
PURPOSE: To reduce the change in V-T characteristic by the view angle direction, and to obtain excellent performance with a view angle with a simple constitution by forming control capacity between a drain electrode of at least partial thin film transistor among the thin film transistors and a pixel electrode corresponding to it. CONSTITUTION: This device is constituted so that a control capacity is formed between the drain electrode 3 of at least partial thin film transistor among the thin film transistors and the pixel electrode 4 corresponding to it. As a method forming the control capacity, no contact hole on the drain electrode 3 of the thin film transistor is formed. By such a constitution, a voltage applied to a pixel is changed according to the presence of the control capacity even in the same applied voltage, and the different V-T characteristic is obtained for every pixel. Thus, the substantial V-T characteristic becomes the mean of two characteristics, and the change in the V-T characteristic by the view angle direction is reduced. |
