| 摘要 |
PURPOSE: To enhance the reliability of a semiconductor light emitting device by inhibiting crystal defects which proceeding toward a double heterostructure from outside by way of a high density transition introduction layer. CONSTITUTION: An active layer 15 which emits light is sandwiched with two clad layers 14 and 16, thereby forming a double heterostructure. This double heterostructure is sandwiched from both sides by way of a current diffusion layer 17, thereby forming a first electrode 19 and a second electrode 20. A high density dislocation introduction layer 30, lower in physical strength than the double heterostructure, is formed between the first electrode 19 or the second electrode 20 and the double heterostructure. This high density dislocation introduction layer inhibits crystal defects which are proceeding toward the double hetero structural part. This construction makes it possible to enhance the reliability and manufacturing yield of semiconductor light emitting devices or the like. |
