| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a traversal resonance tunneling structure, and a simple fabrication method thereof, in which sublithography components for forming the line width is formed through a large number of angled deposition for more than one tunneling barrier and a quantum well being formed simultaneously between them. SOLUTION: A resonance tunneling diode 400 is etched in a traversal quantum well 406 and transports carriers laterally through tunneling barriers 404, 408 being grown at the time of refilling a groove for forming a quantum wire or a quantum dot. In the fabrication, angled deposition is employed in order to create an overhang at the top of an opening for defining the sublithography isolation with respect to the position of tunneling barrier.</p> |
