| 摘要 |
<p>PURPOSE: To prevent a semiconductor IC from erroneously operating due to incoming noise, unnecessary radiation by incorporating a capacitor material containing AlN, and TiN and/or ZrN in specific proportions and having high dielectric constant in a circuit board and a package. CONSTITUTION: A multilayer AlN circuit board contains a high dielectric film 11 and an insulator layer 13 so laminated as to hole the film 11, and electrode layers 15 formed on and below the layer 11. First, the dielectric layer is formed of molded form containing 70 to 90wt.% AlN and 10 to 30wt.% TiN and/or ZrN. An insulating layer molded form is formed, through holes are formed at the form and the dielectric layer molded form, and high melting point metal paste is filled. Then, electrode layer pastes are screen printed on and below the layers of the dielectric layer molded form to form an electrolytic layer 15. Then the dielectric molded form is interposed between the insulating layer molded forms, and baked in a reducing atmosphere.</p> |
