发明名称 |
ELECTRON BEAM SOURCE, MANUFACTURE THEREOF, ELECTRON BEAM SOURCE APPARATUS AND ELECTRON BEAM APPARATUS USING THEREOF |
摘要 |
<p>PURPOSE: To provide an electron beam source which can generate electron beam of a unicolor and high brightness. CONSTITUTION: An electron forming means, e.g. a doped Si layer 2, to generate electrons in a conduction band is formed near the tip surface of a needle like structure 1 having a sharp tip part and made of a substance at least the surface of which is a semiconductor single crystal or single crystal insulating substance. It is preferable to form a surface passivation layer 4 on the surface of the needle-like structure 1. Furthermore, a means to excite electrons in a valence electron band may be formed instead of the doped Si layer 2.</p> |
申请公布号 |
JPH08180824(A) |
申请公布日期 |
1996.07.12 |
申请号 |
JP19940320188 |
申请日期 |
1994.12.22 |
申请人 |
HITACHI LTD |
发明人 |
OSHIMA TAKU;SHINADA HIROYUKI;KURODA KATSUHIRO |
分类号 |
H01J1/304;H01J1/308;H01J9/02;H01J37/073;(IPC1-7):H01J37/073;H01J1/30 |
主分类号 |
H01J1/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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