发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF |
摘要 |
PURPOSE: To reduce wiring capacitance regarding a semiconductor device with a plurality of wiring patterns formed with intervals. CONSTITUTION: A semiconductor device contains wirings 13 arranged and formed on a foundation insulating film 12 with intervals, dummy patterns 14 formed between the wiring 13 on the base insulating film 12 with intervals and formed in the same layers as the wirings 13 and an insulating film covering the dummy patterns 14 and the wirings 13 and having cavities 17 inside between the dummy patterns 14 and the wirings 13. |
申请公布号 |
JPH08181208(A) |
申请公布日期 |
1996.07.12 |
申请号 |
JP19940322236 |
申请日期 |
1994.12.26 |
申请人 |
FUJITSU LTD |
发明人 |
HOSODA YUKIO;ICHIKAWA MASAAKI |
分类号 |
H01L21/285;H01L21/28;H01L21/768;H01L23/12;H01L23/522;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|