SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to realize excellent cell performance by securing an enough channel width. An isolation layer(202) is formed on a substrate. Plural gate lines(203) being intersected with each other in a short axis direction of an active region(201) of the substrate are formed on the substrate. A sidewall of the active region exposed to both sides of the gate line is exposed. A contact plug is formed. The contact plug is connected to the sidewall of the exposed active region. The isolation adjacent to the active region is recessed to expose the sidewall of the active region. The gate line is formed so that it is not connected to another active region adjacent to a long axis direction of the active region. A depth of the sidewall of the active region is 100 to 1000 Å by forming a boundary with an upper surface of the active region. The gate line is a bulb-type recess gate or a polygon recess gate.