| 摘要 |
A method for fabricating a semiconductor device is provided to reduce contact resistance by increasing a contact area between a storage node contact plug and a landing plug. A first insulation layer(102) is formed on a substrate(101) having a conductive layer. A plurality of conductive patterns are formed on the first insulation layer. Conductive pattern spacers are formed on both sidewalls of the conductive pattern. A second insulation layer(104) is formed on the substrate to cover the conductive pattern. The second insulation layer between the conductive patterns is etched wherein even a part of the first insulation layer is over-etched. Spacers are formed on a sidewall of the conductive pattern and a sidewall of an open part formed by the over-etch process. The bottom surface of the open part is expanded. The expanded bottom surface of the open part is etched to expose the conductive layer.
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