| 摘要 |
A plasma processing apparatus is provided with a replacement time detecting means (64), which detects the status of residual charges which attract a semiconductor wafer (W) and detects a time when an electrostatic chuck (10) is to be replaced, at a time when a direct voltage application from a direct current source (13) is stopped and the semiconductor wafer (W) is brought up from the electrostatic chuck (10).
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