| 摘要 |
PURPOSE: To remarkably reduce the state density of holes, and improve the efficiency of a light emitting element, by constituting at least an active layer as zincblende structure. CONSTITUTION: A surface nitride layer is formed on a (001) GaAs substrate 1 by high temperature annealing in, e.g. an ammonia atmosphere. After that, a first clad layer 3 of N-Al0.2 Ga0.8 N, a multiquantum well active layer 4 of GaN/Al0.2 Ga0.8 N, a second clad layer 5 of P-Al0.2 Ga0.8 N, and a P-GaN contact layer 6 are continuously formed by an organometal vapor deposition method. All of the GaAs substrate 1-GaN contact layer 6 are constituted of zincblende type crystal. In AlGaInN system, zincblende type crystal is used in the active layer 4, and further quantum effect, 2-axial type strain, etc., are controlled. Thereby a short wavelength semiconductor light emitting element whose luminous efficiency is higher than the conventional element can be obtained. |
