发明名称 |
A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device |
摘要 |
In a method for producing a channel region layer in a SiC-layer for producing a voltage controlled semiconductor device n-type dopants and p-type dopants are implanted into a near-surface layer of the SiC layer. The p-type dopants implanted have a higher diffusion rate in SiC than the n-type dopants implanted. The SiC-layer is then heated at such a temperature that p-type dopants implanted diffuse from the near-surface layer into the surrounding regions of the SiC-layer being lightly n-doped to such a degree that a channel region layer in which p-type dopants dominates is created. |
申请公布号 |
SE9602745(D0) |
申请公布日期 |
1996.07.11 |
申请号 |
SE19960002745 |
申请日期 |
1996.07.11 |
申请人 |
ABB RESEARCH LTD |
发明人 |
CHRISTOPHER *HARRIS |
分类号 |
H01L21/265;H01L21/04;H01L21/22;H01L21/335;H01L21/336;H01L29/12;H01L29/24;H01L29/739;H01L29/78;(IPC1-7):H01L/ |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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