| 摘要 |
<p>A novel process is taught for forming diodes in a process which simultaneously forms MOS or CMOS devices. These diodes have relatively low breakdown voltage, making them suitable for ESD protection devices or as voltage reference diodes. In alternative embodiments, novel low breakdown voltage devices are fabricated in a similar fashion as MOS devices but with doping levels such that the inherent bipolar device has a low breakdown voltage characteristic. In alternative embodiments, novel vertical bipolar transistors are taught, as are SCR devices, having low breakdown voltage characteristics. In one embodiment of this invention, a low breakdown voltage device is integrated directly with a standard MOS transistor, allowing the low breakdown voltage device to trigger the turn on of the standard MOS device, thereby providing large current capacity controlled by the low breakdown voltage device.</p> |
