Plastic encapsulation of IC device by two level epoxy encapsulation

摘要

A two level epoxy encapsulated integrated circuit device with improved high temperature characteristics is disclosed. The arrangement is particularly useful in packaging integrated circuits having aluminum die pads that are electrically connected to other components using gold bonding wires. A non-brominated epoxy topping is applied over the top surface of the die taking special care to encapsulate the intermetallic gold/aluminum bond regions. A second level encapsulation involving a transfer molding compound is then performed to form an exterior plastic package. The resulting package has reduced intermetallic growth and improved high temperature storage life and operational reliability.