METHOD FOR FORMING NODE ELECTRODE OF CAPACITOR

摘要

forming a gate insulating layer and a gate electrode (23); forming an impurity diffusion region (36); forming a first insulating layer (26) on the substrate ; removing the first insulating layer on one side of the gate electrode and forming bitline (27) to be connected to the impurity diffusion region; forming a second, a third, a forth insulating layer, a first conducting layer and a fifth insulating layer; forming a storage node contact hole (35); forming a second conducting layer in the storage node contact hole; etching the first conducting layer and the fifth insulating layer selectively; forming a third conducting layer, and removing the fifth and the forth insulating layer.