| 摘要 |
The DRAM is prepared by defining active and field regions by growing the field oxide layer(2) on wafer(1), and forming gates by depositing a 1st crystal silicone(4) and patterning; forming N- region(20) by implanting ions, and depositing the 1st insulator(21) on the surface except the center of gate and then forming a conductor(22) on the whole surface; removing the 1st insulator(21) and conductor(22) of the capacitor contact region, and forming a side wall insulator(23) on both sides of the conductor(22) and then forming N+ region(24) by implanting ions; forming a 2nd insulator(25) on the surface except the capacitor contact region and patterning the capacitor on the whole surface; forming a 3rd insulator(29) on the whole surface, removing the 3rd insulator(29) of metal contact region and then forming bit line(31) on the whole surface.
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