Ferroelectric memory and method for controlling operation of the same

摘要

In a ferroelectric memory, when data is read out from a memory cell, a variation absorbing circuit minimizes a variation of the voltage on the pair of data signal lines caused by factor other than the current caused due to the polarization of the ferroelectric capacitor. Thus, a voltage not smaller than the coercive voltage can be applied between the opposing electrodes of the ferroelectric capacitor, with the result that a sufficient read-out signal voltage can be obtained. <IMAGE>