| 摘要 |
<p>A method for making a metal-to-metal capacitor for an integrated circuit includes forming a layer of titanium/titanium nitride (14a,14b) on a polysilicon layer (12) which has been patterned with interlevel dielectrics (13). A capacitor dielectric (15) is then deposited, followed by patterning with photoresist to delineate the capacitor, etching to remove extraneous dielectric, deposition of aluminum (17), further patterning and etching to define the capacitor and access area, and removal of photoresist. <IMAGE></p> |
