MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUSE

摘要

forming a first insulating layer(12) on the semiconductor substrate(11) and forming a first fuse(13) on the first insulating layer(12); forming a second insulating layer(14) on the first insulating layer(12) to cover the first fuse(13); forming a second fuse(15) on the second insulating layer(14); forming a third insulating layer(16) on the second insulating layer(14) to cover the second fuse(15); etching the third insulating layer(16) on the cross region of the first and the second fuse.