| 发明名称 |
High voltage thin film semiconductor device |
| 摘要 |
A thin film semiconductor device (1) is formed on an insulating substrate (2). The device (1) has a source (3), gate (7) and drain (4), with the gate (7) and either the drain (4) or source (3) being connected together by a semi-insulating layer (12). The semi-insulating layer (12) improves the high voltage breakdown characteristics of the device (1). |
| 申请公布号 |
AU1320895(A) |
申请公布日期 |
1996.07.10 |
| 申请号 |
AU19950013208 |
申请日期 |
1994.12.20 |
| 申请人 |
FRANCIS JOHN CLOUGH;SANKARA NARAYANAN EKKANATH MADATHIL;WILLIAM IRELAND MILNE |
发明人 |
FRANCIS JOHN CLOUGH;SANKARA NARAYANAN EKKANATH MADATHIL;WILLIAM IRELAND MILNE |
| 分类号 |
H01L29/06;H01L29/40;H01L29/786 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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