METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a contact hole of a semiconductor device is provided to minimize thickness of a conductive layer formed in a bottom part of a contact hole by forming a contact hole through two etching processes. An electrode structure(103) including a conductive layer and a planarization structure(105) are successively formed on a semiconductor substrate(101). The electrode structure is exposed by etching a designated region of the planarization structure through a first etching process using a first etching gas. A designated region of the electrode structure is etched in order to expose a surface of the conductive layer through a second etching process using a second etching gas. The first etching gas is a CxFy based gas. The second etching gas is a CHxFy based gas.