Insulated-gate bipolar transistor and process of producing the same,申请号GB19930022665-传众专利搜索

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发明名称	Insulated-gate bipolar transistor and process of producing the same
摘要
申请公布号	GB2272572(B)	申请公布日期	1996.07.10
申请号	GB19930022665	申请日期	1993.11.03
申请人	* FUJI ELECTRIC CO LTD	发明人	HITOSHI * SUMIDA
分类号	H01L21/331;H01L29/06;H01L29/739;(IPC1-7):H01L29/739	主分类号	H01L21/331
代理机构		代理人
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