| 摘要 |
An improved shutter activating mechanism for an ion implantation apparatus, used to implant ions into semiconductor wafers, is described. The apparatus has an ion source, an ion accelerator, an ion beam shutter, and an ion beam shaping plate system. The improvement consists of a improved shutter activating mechanism with a rotatable shaft fixed to the ion beam shutter, a cross bar fed to the rotatable shaft, a abutment surface for limiting rotational movement of the cross bar, and a driving solenoid provided with a push rod. A bifurcated element is fixed to the end of the push rod which has aligned transverse apertures, a link joining the bifurcated element and the push rod, the link having an aperture on one end, a bearing assembly to allow limited axial movement, an a first pin through the transverse aperture and the bearing assembly. The link has a bifurcated end with transverse aperture. A second pin provides a connection between the bifurcated end of the link and the cross bar.
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