Method for etching HgCdTe substrate

摘要

A method for etching an HgCdTe substrate selectively by dry etching. A substrate is selectively etched without damaging the substrate during a simple process in which the higher selectivity of an HgCdTe substrate versus a resist mask is obtainable. Removal of the resist mask after etching is easy. The etching gas contains molecules having a bond of nitrogen and hydrogen and is formed into plasma. An HgCdTe substrate is etched with a resist film as a mask by the plasma gas.