发明名称 |
Layered low dielectric constant technology |
摘要 |
A layered dielectric structure is provided, which separates a first layer of metal interconnects from each other in semiconductor devices and also separates the first layer from a second, overlying layer of metal interconnects for making electrical contact to the first layer of metal interconnects. The layered dielectric structure comprises: (a) a layer of an organic spin-on-glass material filling gaps between metal interconnects in the first layer of metal interconnects; (b) a layer of an inorganic spin-on-glass material to provide planarization to support the second layer of metal interconnects; and (c) a layer of a chemically vapor deposited oxide separating the organic spin-on-glass layer and the inorganic spin-on-glass layer. The layered dielectric structure provides capacitances on the order of 3.36 to 3.46 in the vertical direction and is about 3.2 in the horizontal direction. This is a reduction of 10 to 15% over the prior art single dielectric layer, using existing commercially available materials.
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申请公布号 |
US5534731(A) |
申请公布日期 |
1996.07.09 |
申请号 |
US19940330871 |
申请日期 |
1994.10.28 |
申请人 |
ADVANCED MICRO DEVICES, INCORPORATED |
发明人 |
CHEUNG, ROBIN W. |
分类号 |
H01L21/31;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L29/06;H01L23/52;H01L29/40 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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