| 摘要 |
Method for forming an SOI (Silicon On Insulator) structured substrate comprising the steps of forming a first insulation film on a silicon substrate, selectively exposing the substrate by selectively removing the first insulation film, forming high density impurity regions in the substrate by injecting high density impurity ions into the exposed substrate wherefrom the first insulation film has been removed, forming a first epitaxial layer on the surface of the first insulation film and the high density impurity regions, removing a portion of the first epitaxial layer on each of the high density impurity regions, forming a second insulation film on the first epitaxial layer, forming an insulation layer including the first insulation film and the second insulation film on the substrate by etching the second insulation film to expose the first epitaxial layer, and growing a second epitaxial layer on the surface of the insulation layer.
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