| 摘要 |
A method for optimizing the connection between active device regions in silicon, to overlying metallization levels, has been developed. A polysilicon contact plug process, consuming less area then conventional contacts, has been created. The highlight of this process is the complete conversion of residual polysilicon, in all areas except in the contact hole, to thermal oxide. The thermal oxide is then selectively removed, resulting in a polysilicon contact plug structure.
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