发明名称 MULTI BIT TEST CIRCUIT AND METHOD OF SEMICONDUCTOR MEMORY DEVICE
摘要 a multiplxer(12) for outputting a same level of logic data to multiple data buses; a 1st comparator(14) for checking logic levels of data buses; a test controller(10) for activating the multiplxer and 1st comparator complimentarily by combining a test enable signal, a read signal and an input signal; a data in/out lines for connecting data buses through read lines and an input path; 2nd comparator for comparing logic levels of data in/out lines; and a data in/out controller for connecting data in/out lines to the input path or the read lines by combining an input or a read control signal with a column address signal in a 1st operating mode, and transmitting the output of 2nd comparator to a data bus in 2nd operating mode.
申请公布号 KR960008824(B1) 申请公布日期 1996.07.05
申请号 KR19930024485 申请日期 1993.11.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, CHOONG - SUN
分类号 G01R31/28;G11C11/401;G11C29/00;G11C29/34;G11C29/38;H01L27/00;(IPC1-7):G11C29/00 主分类号 G01R31/28
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