GTO-thyristor with front and rear-sided emitter zones

摘要

The GTO-thyristor has an inner zone (1) which is connected to a rear-sided emitter zone (4). A base zone (5) is connected to the other side of the inner zone. A front-sided emitter zone (6) has a higher level of doping than the base zone. The base zone has a constant level of doping over its thickness. In one embodiment the inner zone comprises two layers (2,3) of opposite conductivity type. The concentration of dopant in both layers is the same. The base zone in an epitaxial layer.