发明名称 METHOD OF PRODUCING BORON-DOPED MONOCRYSTALLINE SILICON CARBIDE
摘要 In a CVD process or a sublimation process an organic boron compound is used for doping a SiC-monocrystal, the molecules of said boron compound comprising at least one boron atom chemically bonded to at least one carbon atom. The preferred boron compounds are boron trialkyls.
申请公布号 WO9620298(A1) 申请公布日期 1996.07.04
申请号 WO1995DE01787 申请日期 1995.12.13
申请人 SIEMENS AKTIENGESELLSCHAFT;STEIN, RENE;RUPP, ROLAND 发明人 STEIN, RENE;RUPP, ROLAND
分类号 C30B29/36;C23C16/42;C30B25/02 主分类号 C30B29/36
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