发明名称 |
METHOD OF PRODUCING BORON-DOPED MONOCRYSTALLINE SILICON CARBIDE |
摘要 |
In a CVD process or a sublimation process an organic boron compound is used for doping a SiC-monocrystal, the molecules of said boron compound comprising at least one boron atom chemically bonded to at least one carbon atom. The preferred boron compounds are boron trialkyls. |
申请公布号 |
WO9620298(A1) |
申请公布日期 |
1996.07.04 |
申请号 |
WO1995DE01787 |
申请日期 |
1995.12.13 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;STEIN, RENE;RUPP, ROLAND |
发明人 |
STEIN, RENE;RUPP, ROLAND |
分类号 |
C30B29/36;C23C16/42;C30B25/02 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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