Selbstbootstrapvorrichtung

摘要

A self-bootstrapping device for bootstrapping the bias applied to the gate of a MOS transistor in a decoder (20) of a semiconductor memory device requires a high degree of integration so that the MOS transistor can transmit the potential from its drain to its source. The self-bootstrapping device comprises a first NMOS transistor (Q2) for signal transmission, and a second NMOS transistor (Q3) connected between the gate of the first NMOS transistor and an address decoder circuit (20). The second NMOS transistor (Q3) has a source voltage applied at its gate and comprises first and second diffusion regions (40, 50) formed in a semiconductor substrate and spaced apart a predetermined distance. A gate electrode (60) is formed on the semiconductor substrate between the first and second diffusion regions. In one implementation, the gate electrode (60) and the two diffusion regions (40, 50) are rectangular or annular in shape. The diffusion regions may be of different types, ie N<+> and N<-)<figs 6 and 7). <IMAGE>