发明名称 |
Process and apparatus for forming thin films of metallic compounds |
摘要 |
A process of forming films of metallic compounds on a substrate is disclosed, which essentially comprises producing a sputtered ultra-thin film and transforming this film into one of a metallic compound such as a metal oxide by exposing it to a reactive gas plasma. This operation is repeated until the resulting film product gains a desired thickness. An apparatus for carrying the process into practice is also disclosed, which comprises a sputtering electrode in a film-forming zone for producing a sputtered film of metal or metallic compound and a plasma generator in a plasma exposure zone to which the sputtered film is exposed to transform into one of a metallic compound. The two zones are respectively shielded against mutual interference. |
申请公布号 |
AU4076195(A) |
申请公布日期 |
1996.07.04 |
申请号 |
AU19950040761 |
申请日期 |
1995.12.28 |
申请人 |
SHINCRON CO, LTD |
发明人 |
JUNICHI TAMOTO;KATSUHISA OKADA;SEISHI NARISAWA;TAKASHI ITO |
分类号 |
C23C14/08;C23C14/00;C23C14/14;C23C14/34;C23C14/56;C23C14/58 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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