Monitoring film growth by interferometry

摘要

The growth of a crystalline thin film 2 is monitored during metalorganic chemical vapour deposition by directing two wavelengths of light from lasers 10 and 20 onto the film and detecting interference in the two sets of beams reflected from the surface. From the interference modulated intensities of the sets of beams detected at Silicon detector 70 and Germanium detector 90 the variation of the thickness and composition of the film is calculated during the growing process, facilitating in-situ adjustment.