Methods of forming a non-planar ultra-thin body semiconductor device and the resulting devices

摘要

One device disclosed includes a gate structure positioned around a perimeter surface of the fin, a layer of channel semiconductor material having an axial length in the channel length direction of the device that corresponds approximately to the overall width of the gate structure being positioned between the gate structure and around the outer perimeter surface of the fin, wherein an inner surface of the layer of channel semiconductor material is spaced apart from and does not contact the outer perimeter surface of the fin. One method disclosed involves, among other things, forming first and second layers of semiconductor material around the fin, forming a gate structure around the second semiconductor material, removing the portions of the first and second layers of semiconductor material positioned laterally outside of sidewall spacers and removing the first layer of semiconductor material positioned below the second layer of semiconductor material.

主权项

1. A device, comprising:
a fin defined in a semiconductor substrate; a gate structure positioned around an outer perimeter surface of said fin, the gate structure comprising agate insulation layer, a gate electrode and at least one outermost sidewall spacer, the gate structure having an overall width in a channel length direction of the device that is defined by outer edges of said at least one outermost spacer; and a layer of channel semiconductor material positioned between said gate structure and around said outer perimeter surface of said fin without extending beyond said gate structure in said channel direction, wherein an inner surface of said layer of channel semiconductor material is spaced apart from and does not contact said outer perimeter surface of said fin.