| 发明名称 |
NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD AND MANUFACTURING EQUIPMENT |
| 摘要 |
A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1×1017/cm3 or lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0×10−3 atm or higher onto the substrate, and growing a GaN crystal in the −C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200° C. or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0×10−3 atm or higher onto the substrate, and growing an AlN crystal in the −C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400° C. or higher. |
| 申请公布号 |
US2016186361(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201615064553 |
申请日期 |
2016.03.08 |
| 申请人 |
National University Corporation Tokyo University of Agriculture and Technology |
发明人 |
KOUKITU Akinori;KUMAGAI Yoshinao;MURAKAMI Hisashi |
| 分类号 |
C30B25/14;C30B25/16;H01L21/02;C30B25/20;C30B29/40;C30B25/10;C30B25/18 |
主分类号 |
C30B25/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method for a nitride semiconductor crystal, comprising:
providing a substrate; feeding a gallium trihalide gas having a partial pressure of 9.0×10−3 atm or higher onto the substrate; and growing a GaN crystal in the −C-axis direction on the substrate, wherein a growth temperature for the GaN crystal is 1200° C. or higher. |
| 地址 |
Tokyo JP |
