| 发明名称 |
Method of treating metal nitride films to reduce silicon migration therein |
| 摘要 |
<p>A method of treating the surface of a metal nitride barrier layer (15) on an integrated circuit to reduce the movement of silicon through the barrier. The metal nitride barrier (such as TiN) is exposed to a nitrogen plasma (17), thereby improving the barrier properties of the metal nitride barrier. <IMAGE></p> |
| 申请公布号 |
EP0720214(A2) |
申请公布日期 |
1996.07.03 |
| 申请号 |
EP19950120633 |
申请日期 |
1995.12.28 |
| 申请人 |
APPLIED MATERIALS INC.;AT&T CORP. |
发明人 |
HOWER, GLENN ROY;KOSTELNICK, DANIEL DAVID;SHIH, YIH-CHENG |
| 分类号 |
H01L23/52;C23C14/58;H01L21/3205;H01L21/321;H01L21/768;(IPC1-7):H01L21/321 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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