发明名称 |
SEMICONDUCTOR MANUFACTURING DEVICE |
摘要 |
<p>PURPOSE: To provide the title semiconductor manufacturing device capable of improving the reliability uppon the attraction to static electricity. CONSTITUTION: Within the title semiconductor manufacturing device composed of a vacuum vessel 2 to be a treatment chamber internally covered with an insulating material, a specimen base 6 mounting a semiconductor wafer 1 in the vacuum vessel 2 to be impressed with DC power source 3, and low frequency power source 5 as well as an counter electrode 7 electrically insulated from the specimem base 6 but impressed with high-frequency power supply 4, the semiconductor wafer 1 is static electrically attracted to the specimen base 6 by the potential difference between the plasma potential generated by the high-frequency discharge between the specimen base 6 and the counter electrode 7.</p> |
申请公布号 |
JPH08172072(A) |
申请公布日期 |
1996.07.02 |
申请号 |
JP19940313006 |
申请日期 |
1994.12.16 |
申请人 |
HITACHI LTD;HITACHI TOKYO ELECTRON CO LTD |
发明人 |
TAMAI TAKAHIRO;NATORI IWAO;HASEBE ARIHIRO |
分类号 |
B23Q3/15;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/306 |
主分类号 |
B23Q3/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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