发明名称 SEMICONDUCTOR MANUFACTURING DEVICE
摘要 <p>PURPOSE: To provide the title semiconductor manufacturing device capable of improving the reliability uppon the attraction to static electricity. CONSTITUTION: Within the title semiconductor manufacturing device composed of a vacuum vessel 2 to be a treatment chamber internally covered with an insulating material, a specimen base 6 mounting a semiconductor wafer 1 in the vacuum vessel 2 to be impressed with DC power source 3, and low frequency power source 5 as well as an counter electrode 7 electrically insulated from the specimem base 6 but impressed with high-frequency power supply 4, the semiconductor wafer 1 is static electrically attracted to the specimen base 6 by the potential difference between the plasma potential generated by the high-frequency discharge between the specimen base 6 and the counter electrode 7.</p>
申请公布号 JPH08172072(A) 申请公布日期 1996.07.02
申请号 JP19940313006 申请日期 1994.12.16
申请人 HITACHI LTD;HITACHI TOKYO ELECTRON CO LTD 发明人 TAMAI TAKAHIRO;NATORI IWAO;HASEBE ARIHIRO
分类号 B23Q3/15;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/306 主分类号 B23Q3/15
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