发明名称 Method of and apparatus for removing foreign particles
摘要 A method of and apparatus removes foreign particles in a vacuum or in a dry atmosphere before and in continuation to performing a dry process, such as a dry etching or a sputtering process. For this purpose, the foreign particles are separated from a substrate by subjecting the foreign particles to a force for separating the foreign particles from the substrate and a vibrating force for vibrating the foreign particles at the same time, and then the frequency of vibration is changed to match the resonant frequency of a vibration system formed by each of the foreign particles and the substrate, thereby applying a vibration energy to the foreign particles due to resonance. The separated foreign particles floating in a plasma are drawn to an electrode having a potential which is controlled such that a flowing-in of electrons is reduced, and the particles are discharged from the inside of the plasma. In this way, the foreign particles can be reduced and the yield of the product in manufacturing semiconductors and TFTs can be promoted. Further, a cleaning step, a film forming operation, an etching process and the like can continuously be processed, thereby achieving a reduction in steps and a promotion in productivity.
申请公布号 US5531862(A) 申请公布日期 1996.07.02
申请号 US19940277017 申请日期 1994.07.19
申请人 HITACHI, LTD. 发明人 OTSUBO, TORU;SUZUKI, YASUMICHI;SASAKI, SHINJI;OHARA, KAZUHIRO;SASAKI, ICHIROU
分类号 C23C14/56;C23C16/44;H01J37/32;H01L21/306;(IPC1-7):H01L21/00 主分类号 C23C14/56
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