IRRADIATOR FOR LASER BEAM AND IRRADIATING METHOD OF LASER BEAM

摘要

PURPOSE: To provide the method of a higher annealing effect in the annealing method of a semiconductor film by the irradiation of laser beams. CONSTITUTION: An amorphous silicon film 102 formed on a glass substrate 110 is irradiated with linear laser beams 100 while laser beams 100 are run relatively in the direction of 109. A region immediately before laser beams are applied and a region immediately after laser beams are applied are heated by heaters shown in 105 and 106 at that time. According to such constitution, a sudden phase change with the irradiation of laser beams is not generated, and the amorphous silicon film 102 can be brought to the state of higher crystallizability.